BSP126 |
RFQ for BSP126 Required Field |
 |
| Technical/Catalog Information | BSP126,115 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25° C | 375mA |
| Rds On (Max) @ Id, Vgs | 5 Ohm @ 300mA, 10V |
| Input Capacitance (Ciss) @ Vds | 120pF @ 25V |
| Power - Max | 1.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Depletion Mode |
| Drawing Number | 568; SOT223; ; |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BSP126,115 BSP126,115 |
| Product | Manufacturers | Pack | D/C |
| BSP126 | - | TO-223 | 07+ |
N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.
Features |
| · Direct interface to C-MOS, TTL, etc.· High-speed switching.· No secondary breakdown. |
|
Drain-source voltage |
VDS |
max. |
250 V |
|
Gate-source voltage (open drain) |
±VGSO |
max. |
20 V |
|
Drain current (DC) |
ID |
max. |
350 mA |
|
Drain current (peak) |
IDM |
max. |
1.2 A |
|
Total power dissipation up to Tamb = 25 °C (note 1) |
Ptot |
1.5W | |
|
Storage temperature range |
Tstg |
-65 to + 150 °C | |
|
Junction temperature |
Tj |
max. |
150 °C |
| Models | MFG | Pack |
| BSP030 | SOT-223 | |
| BSP030/BSP030 | ||
| BSP090 | ||
| BSP100 | SOT-223 | |
| BSP100/BSP100 | ||
| BSP100135 | ||
| BSP103 | ||
| BSP105 | ||
| BSP106 | SOT-223-3 | |
| BSP107 | SOT-223-3 | |
| BSP108 | SOT-223-3 | |
| BSP109 | ||
| BSP110 | SOT-223 | |
| BSP120 | SOT-223-3 | |
| BSP121 | ||
| BSP122 | SOT-223 | |
| BSP123 | SOT-223-3 | |
| BSP123E6327 | ||
| BSP124 | ||
| BSP125 | SOT-223 |
